Samsung to make 16Gb NAND Flash memory
By Dusan Belic on Tuesday, May 1st, 2007 at 6:03 AM PST In Announcements, Samsung, Technologies
Samsung announced beginning of the mass production of the 16 gigabit (Gb) NAND flash memory chip. The Korean company will use the finest 51 nanometers (nm) technology to make these memories.
The new 16Gb chip has a multi-level cell (MLC) structure and can facilitate capacity expansion by offering 16 gigabytes of memory in a single memory card. Furthermore, by applying the new process technology, Samsung has accelerated the chip’s read and write speeds by approximately 80% over current MLC data processing speeds.
Technology migration to 16Gb is expected to boost the demand for high-density data storage in high-end music phones and portable media players.
