Samsung has started mass production of what it says is its “most advanced DDR3 memory” based on 20nm process technology. The new 4Gb (Gigabit) DRAM utilizes a modified double patterning technology with the “immersion ArF lithography,” which Samsung reckons paves the way for next generation 10nm-class DRAMs. Moreover, with the new 20nm DDR3 DRAM – the Korean company has also managed to improve its manufacturing productivity by 30%, while saving up to 25% of the energy consumed compared to the 25nm DDR3 modules.
The next step would be to put these new modules into real-world devices. At the moment, we’re still not sure when that will happen and can only hope phones and tablets with this memory will hit the market soon. If I would have to bet, we’ll see not one but few products rocking Samsung’s new memory during the second half of the year…
[Via: SammyHub]