Samsung has announced that it has started producing 515Mb Phase-Change Memory, aka PRAM! Interestingly, this is targeted for mobile devices, as it gives high-performance and low power consumption. Samsung says that a handset using PRAM can extend it’s lifetime by 20%.
The 512Mb PRAM can erase 64KWs (kilowords) in 80ms, said to be over 10 times faster than NOR Flash memory. In data segments of 5MBs, PRAM can erase and rewrite data approximately seven times faster than NOR Flash.
Er… jolly good – as long as it gives us memory that’s quick and doesn’t thrash the battery, we’ll all be happy 🙂
[Via: mram-info.com via: TechOn
The 512Mb PRAM can erase 64KWs (kilowords) in 80ms, said to be over 10 times faster than NOR Flash memory. In data segments of 5MBs, PRAM can erase and rewrite data approximately seven times faster than NOR Flash.
Er… jolly good – as long as it gives us memory that’s quick and doesn’t thrash the battery, we’ll all be happy 🙂
[Via: mram-info.com via: TechOn]