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Samsung’s 20nm NAND Flash memory promises up to 50% higher speeds

April 20, 2010 by Dusan Belic - Leave a Comment

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Samsung has unveiled the industry’s first 20nm-based NAND flash chips that will be used in SD memory cards and embedded memory solutions.

According to the Korean company, using the new technology, these chips give 50% higher productivity than 30nm MLC NAND with a read speed of 20MB/s and write speed at around 10MB/s.

I’ll stop here to drop my cents to the game. Just because read/write speeds of the Flash memory modules are 50% faster, it doesn’t mean some new devices will actually run 50% faster, all other things being equal. It’s a step forward, there are no doubts about it, but Flash memory is already super fast — usually, a more powerful CPU and more available RAM are responsible for the phone’s performance improvements.

Back to Samsung. The company is currently sampling the cards (chips) to its customers. Once released, the new modules and SD cards will be available in capacities ranging from 4GB to 64GB.

UPDATE: Samsung hasn’t revealed the actual node size. So it can be anywhere between 20 to 30nm. Thanks for the tips Joseph!

[Via: SamsungHub]

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